Semiconductor device that is advantageous in operational environment at high temperatures
AssigneeKabushiki Kaisha Toshiba
InventorZhengwu Jin
Life of this patent
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Abstract
A semiconductor device includes an N-type insulated-gate field-effect transistor including a first insulating layer that is provided along side walls of a gate electrode, has a negative thermal expansion coefficient, and applies a tensile stress to a channel region of the N-type insulated-gate field-effect transistor. The device also includes a P-type insulated-gate field-effect transistor including a second insulating layer that is provided along side walls of a gate electrode, has a positive thermal expansion coefficient, and applies a compression stress to a channel region of the P-type insulated-gate field-effect transistor.
Claims20
A semiconductor device comprising:
- an insulated-gate field-effect transistor including a gate electrode that is provided on a semiconductor substrate,
- a source and a drain that are provided in the semiconductor substrate such that the gate electrode is interposed between the source and the drain,
- a first insulating layer that is provided to extend from over the source and the drain to over the gate electrode, and
- a second insulating layer that is provided on the first insulating layer in a direction crossing the first insulating layer.
A method of manufacturing a semiconductor device comprising:
- forming a first and a second insulated-gate field-effect transistors on a semiconductor substrate;
- forming a first insulating layer that is provided to extend from over a source and a drain to over a gate electrode of the first insulated-gate field-effect transistor, the first insulating layer applies a tensile stress to a channel region that is formed between the source and the drain, and
- forming a second insulating layer that is provided to extend from over a source and a drain to over a gate electrode of the second insulated-gate field-effect transistor, the second insulating layer applies a compression stress to a channel region that is foimed between the source and the drain.
Dependencies are inferred from the claim text.