Phase-change memory device
AssigneeHynix Semiconductor Inc.
InventorHo-Seok Em
Life of this patent
Estimating the term…
Abstract
A phase-change memory device performs a buffer program operation in response to a buffer program command sequence. The phase-change memory device includes a page buffer unit configured to store a plurality of input data corresponding to a word count value of a buffer program command sequence and selectively output the stored input data in response to a selection signal, and a page buffer control unit configured to generate the selection signal determined by counting a value representing the word count value.
Claims15
A phase-change memory device performing a buffer program operation, comprising:
- a page buffer unit configured to store a plurality of input data corresponding to a word count value of a buffer program command sequence and selectively output the stored input data in response to a selection signal;
- and
- a page buffer control unit configured to generate the selection signal determined by counting a value representing the word count value.
A phase-change memory device performing a buffer program operation, comprising:
- a page buffer unit configured to store a plurality of input data corresponding to a word count value of a buffer program command sequence in response to an internal clock signal, and selectively output the stored input data in response to a selection signal;
- and
- a page buffer control unit configured to generate the selection signal by up-counting or down-counting the word count value, and output the internal clock signal.
Dependencies are inferred from the claim text.