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AssigneesFunai Electric Advanced Applied Technology Research Institute Inc., Funai Electric Co., Ltd.
InventorsShigeo Furuta, Tsuyoshi Takahashi, Masatoshi Ono
Estimating the term…
Disclosed is a switching element including: an insulative substrate; a first electrode and a second electrode provided to the insulative substrate; an interelectrode gap between the first electrode and the second electrode, comprising a gap of a nanometer order which causes switching phenomenon of resistance by applying a predetermined voltage between the first electrode and the second electrode; and a sealing member to seal the interelectrode gap such that the gap is retained.
A switching element comprising:
A switching element comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
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About 3 years 7 months of term left · ends 24 May 2030 (estimated)
1. Field of the Invention
The present invention relates to a switching element, a method of manufacturing the switching element, and a memory element array.
2. Description of Related Art
The present invention will become more fully understood from the detailed description given hereinbelow and the appended drawings which given by way of illustration only, and thus are not intended as a definition of the limits of the present invention, and wherein;
FIG. 1 shows a main part of the switching element of the present embodiment;
FIG. 2 shows a main part of the memory element array of the present embodiment; and
Hereinafter, a best mode for carrying out the invention is described in detail with reference to the drawings. However, it is not intended the scope of the invention is limited to the drawings.
FIG. 1 is a sectional view of a main part of a switching element 1 which is one example of embodiments of the present invention. FIG. 2 is a perspective sectional view of a main part of a memory element array 100 which is one example of embodiments of the present invention.
[Configuration of Switching Element]