Thin film transistor array panel and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-Hwan Cho, Bo-Sung Kim, Jung-Han Shin, Ju-Han Bae
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Abstract
A thin film transistor substrate according to one or more embodiments of the present invention includes a gate line formed on a substrate, a data line that is insulated from and intersects the gate line, a thin film transistor connected to the gate line and the data line, a barrier rub formed on the thin film transistor and partitioning a plurality of first openings, a reflecting electrode formed in each of the first openings, and a pixel electrode formed on the reflecting electrode and that is electrically connected to the thin film transistor.
Claims17
A thin film transistor (TFT) substrate comprising:
- a gate line formed on a substrate;
- a data line that is insulated from and intersects the gate line;
- a thin film transistor connected to the gate line and the data line;
- a barrier rib formed on the thin film transistor and partitioning a plurality of first openings;
- a reflecting electrode formed in each of the first openings;
- and
- a pixel electrode formed on the reflecting electrode and electrically connected with the thin film transistor,
- wherein each of the reflecting electrodes has a thickness decreasing from an outer edge to a center of the corresponding first opening, so as to form a concave shape.
Dependencies are inferred from the claim text.