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US 8,044,714 B2Granted
Device and method for amplifying pulsed RF signals
AssigneeThales
InventorAlain Letemplier
Life of this patent
Estimating the term…
Abstract
Device and method are described for amplifying pulsed RF signals, comprising one or more transistors, each comprising a drain, a gate and a source. A device synchronizes the supply for the drain with an RF pulse.
Claims7
A device for amplifying radio frequency (RF) pulses, comprising:
- a transistor having a drain, a gate, and a source, the gate being configured to receive the RF pulses;
- a capacitor configured to store energy suitable for powering the transistor during a duration of transmission;
- a switch coupled between the drain and the capacitor and arranged for selectively coupling the capacitor to the drain;
- and
- a controlling device coupled to the switch and arranged for controlling formation of the RF pulses and for turning on/off the switch in order to power the transistor in a synchronized manner with each of the RF pulses.
2 more elements
A method of amplifying radio frequency (RF) pulses, comprising:
- storing energy in a capacitor, the stored energy being suitable for powering a transistor during a duration of transmission;
- controlling formation of the RF pulses by a controlling device;
- turning on/off a switch for selectively coupling the capacitor to a drain of the transistor in order to power the transistor in a synchronized manner with each of the RF pulses;
- and
- amplifying the RF pulses by the transistor.
2 more elements
Dependencies are inferred from the claim text.