Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorHideo Sato
Life of this patent
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Abstract
A semiconductor device includes a substrate; and a chip formed on the substrate and electrically connected to the substrate by a wire. The chip includes a wiring layer electrically connected to the wire; and a protective layer formed on the wiring layer. The wiring layer includes a wiring portion having the protective layer formed in an upper layer thereof and being electrically connected to another layer at a lower layer thereof; a bonding portion connected to one end of the wire at an exposed surface thereof, the exposed surface not having the protective layer formed in an upper layer thereof; and a connecting portion configured to join the wiring portion and the bonding portion. The connecting portion includes an etched portion formed by digging out the wiring layer.
Claims22
A semiconductor device, comprising:
- a substrate;
- and
- a chip formed on said substrate and electrically connected to said substrate by a wire,
- said chip comprising:
- a wiring layer electrically connected to said wire;
- and
- a protective layer formed on said wiring layer,
- said wiring layer comprising:
- a wiring portion having said protective layer formed in an upper surface thereof and being electrically connected to another layer at a lower layer thereof;
- a bonding portion connected to one end of said wire at an exposed surface thereof, said exposed surface not having said protective layer formed in an upper layer thereof;
- and
- a connecting portion extending in a certain direction so as to join said wiring portion and said bonding portion, and formed projecting from said wiring portion,
- said bonding portion being provided at an extremity of said connecting portion,
- said connecting portion comprising an etched portion formed by digging out said wiring layer.
Dependencies are inferred from the claim text.