Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsMitsuru Ohta, Tomoki Kato
Life of this patent
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Abstract
An improved reliability of a junction region between a bonding wire and an electrode pad in an operation at higher temperature is presented. A semiconductor device includes a semiconductor chip provided on a lead frame, which are encapsulated with an encapsulating resin. Lead frames are provided in both sides of the lead frame. A portion of the lead frame is encapsulated with the encapsulating resin to function as an inner lead. The encapsulating resin is composed of a resin composition that contains substantially no halogen. Further, an exposed portion of the Al pad provided in the semiconductor chip is electrically connected to the inner lead via the AuPd wire.
Claims18
A semiconductor device, comprising:
- a semiconductor chip;
- an electrode pad provided in said semiconductor chip;
- and
- a coupling member connected to said electrode pad;
- and
- an encapsulating resin encapsulating at least a connecting region between said electrode pad and said coupling member,
- wherein:
- said encapsulating resin contains no antimony and substantially no halogen,
- said coupling member including a metal according to Formula (I):
- AuM (I), wherein M includes at least one selected from a group consisting of palladium (Pd), copper (Cu), silver (Ag) and platinum (Pt).
A semiconductor device, comprising:
- a semiconductor chip;
- an electrode pad provided in said semiconductor chip;
- and
- a coupling member connected to said electrode pad;
- and
- an encapsulating resin encapsulating at least a connecting region between said electrode pad and said coupling member,
- wherein:
- said encapsulating resin containing substantially no halogen and no antimony,
- said coupling member including a metal according to Formula (I):
- AuM (I), wherein M includes at least one selected from a group consisting of palladium (Pd), copper (Cu), silver (Ag) and platinum (Pt), and
- wherein an unevenly distributed region of M in the metal presented by formula (I) is included in vicinity of said connecting region to said electrode pad in said coupling member.
Dependencies are inferred from the claim text.