Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsNoboru Akiyama, Takayuki Hashimoto, Masaki Shiraishi, Tetsuya Kawashima, Koji Tateno, Nobuyoshi Matsuura
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AssigneeRenesas Electronics Corporation
InventorsNoboru Akiyama, Takayuki Hashimoto, Masaki Shiraishi, Tetsuya Kawashima, Koji Tateno, Nobuyoshi Matsuura
Estimating the term…
A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.