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US 8,044,510 B2Granted
Product and method for integration of deep trench mesh and structures under a bond pad
AssigneeInternational Business Machines Corporation
InventorsEphrem G. Gebreselasie, William T. Motsiff, Wolfgang Sauter, Steven H. Voldman
Life of this patent
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Abstract
A structure includes a substrate. A trench structure is arranged within the substrate. A film is placed under an interlevel dielectric pad and between portions of the trench structure.
Claims26
A structure, comprising:
- a substrate;
- a trench mesh arranged under an interlevel dielectric pad and within the substrate, a first outer perimeter of the interlevel dielectric pad covering a first area within which the trench mesh is completely arranged therein;
- and
- a film placed under the interlevel dielectric pad and between portions of the trench mesh.
1 more element
A structure comprising:
- a trench mesh arranged in a substrate region;
- electrical devices arranged in the trench mesh;
- and
- a bond pad arranged over the trench mesh and the electrical devices,
- wherein a first outer perimeter of the bond pad covers a first area within which the trench mesh and the electrical devices are completely arranged therein.
2 more elements
A structure comprising:
- a trench mesh arranged under a bond pad;
- a circuit element arranged under the bond pad and on a first area that is free of trench mesh and that is within a perimeter of the trench mesh;
- and
- a trench border arranged on the circuit element, a first outer perimeter of the bond pad covering a second area within which the trench mesh, the circuit element, and the trench border are completely arranged therein.
1 more element
Dependencies are inferred from the claim text.