Wiring substrate, manufacturing method thereof, semiconductor device, and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsAkihiro Chida, Tomoyuki Aoki
Life of this patent
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Abstract
A wiring substrate is provided, including an insulating resin layer which is provided on both surfaces of a sheet-like fibrous body and with which the sheet-like fibrous body is impregnated, and a through wiring provided in a region surrounded by the insulating resin layer. The through wiring is formed using a conductive material, the conductive material is exposed on both surfaces of the insulating resin layer, the sheet-like fibrous body is positioned in the conductive material, and the sheet-like fibrous body is impregnated with the conductive material. A manufacturing method of the wiring substrate is also provided.
Claims20
A wiring substrate comprising:
- an insulating resin layer provided on top and bottom surfaces of a sheet-like fibrous body, the sheet-like fibrous body impregnated with the insulating resin layer;
- and
- a wiring surrounded by the insulating resin layer, the wiring comprising a conductive material,
- wherein a portion of the sheet-like fibrous body is positioned in the wiring,
- wherein the wiring is exposed on both surfaces of the insulating resin layer,
- wherein the wiring is in contact with a part of the top surface of the sheet-like fibrous body, and
- wherein the portion of the sheet-like fibrous body is impregnated with the conductive material.
A manufacturing method of a wiring substrate, comprising the steps of:
- impregnating a first region of a sheet-like fibrous body with a conductive resin, whereby forming a wiring, the wiring penetrating the sheet-like fibrous body;
- and
- impregnating a second region of the sheet-like fibrous body with an insulating resin layer, the second region surrounding the first region,
- wherein a portion of the sheet-like fibrous body is positioned in the wiring, and
- wherein the wiring is exposed on both surfaces of the insulating resin layer.
A semiconductor device comprising:
- a resin-impregnated fibrous-body composite substrate including:
- an insulating resin layer provided on top and bottom surfaces of a sheet-like fibrous body, the sheet-like fibrous body impregnated with the insulating resin layer;
- and
- a first wiring surrounded by the insulating resin layer, the first wiring comprising a conductive material,
- wherein a portion of the sheet-like fibrous body is positioned in the first wiring,
- wherein the first wiring is exposed on both surfaces of the insulating resin layer,
- wherein the first wiring is in contact with a part of the top surface of the sheet-like fibrous body, and
- wherein the portion of the sheet-like fibrous body is impregnated with the conductive material;
- and
- an integrated circuit chip including:
- a thin film transistor;
- an insulating layer over the thin film transistor;
- and
- a second wiring on the insulating layer,
- wherein the integrated circuit chip is in close contact with the resin-impregnated fibrous-body composite substrate so that the second wiring is in contact with the first wiring.
A manufacturing method of a semiconductor device comprising the steps of:
- forming a thin film transistor;
- forming an insulating layer over the thin film transistor;
- forming a second wiring on the insulating layer;
- impregnating a first region of a sheet-like fibrous body with a conductive resin, whereby forming a first wiring, the first wiring being in contact with the second wiring, the first wiring penetrating the sheet-like fibrous body;
- and
- impregnating a second region of the sheet-like fibrous body with an insulating resin layer, the second region surrounding the first region,
- wherein a portion of the sheet-like fibrous body is positioned in the first wiring, and
- wherein the first wiring is exposed on both surfaces of the insulating resin layer.
Dependencies are inferred from the claim text.