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US 8,044,492 B2Granted
Compound semiconductor device including AIN layer of controlled skewness
AssigneesFujitsu Limited, Hitachi Cable, Ltd.
InventorsKenji Imanishi, Toshihide Kikkawa, Takeshi Tanaka, Yoshihiko Moriya, Yohei Otoki
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Abstract
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
Claims7
A semiconductor epitaxial substrate comprising:
- a single crystal substrate;
- an AlN layer epitaxially grown on said single crystal substrate;
- and
- a nitride semiconductor layer epitaxially grown on said AlN layer,
- wherein a skewness Rsk of an upper surface of said AlN layer is positive.
2 more elements
Dependencies are inferred from the claim text.