Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus

The ultraviolet detecting device comprising:

• a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, said silicon semiconductor layer being formed over an insulating layer;
• lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer;
• an interlayer insulating film formed over the silicon semiconductor layer;
• a first filter layer made of silicon nitride, said first filter layer being formed over the interlayer insulating film provided over the first photodiode and allowing light lying in a wavelength range of an UV-B wave or higher to pass therethrough;
• and
• a second filter layer made of silicon nitride, said second filter layer allowing light lying in a wavelength range of an UV-A wave or higher to pass therethrough,
• wherein the first filter layer and the second filter layer are stacked over the second photodiode with the interlayer insulating film interposed therebetween.