Light sensor
AssigneeAu Optronics Corporation
InventorsChi-wen Chen, Meng-hsiang Chang
Life of this patent
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Abstract
A light sensor includes an intrinsic layer, a first ion doping area disposed one side of the intrinsic layer, a second ion doping area disposed at the other side of the intrinsic layer, an oxide insulating layer on the intrinsic layer, and a gate metal on the oxide insulating layer. The first and second ion doping areas have the same P type or N type doped ions. The intrinsic layer further includes a first light sensing region close to the first ion doping area. The first light sensing region is used for generating electron-hole pairs based on luminance of incident light.
Claims13
A light sensor comprising:
- an intrinsic layer comprising a first light sensing region, a second light sensing region, and a channel;
- a first ion doping area disposed at a first side of the intrinsic layer;
- a second ion doping area disposed at a second side of the intrinsic layer opposite to the first side, wherein the first light sensing region adjacent to the first ion doping area and the second light sensing region disposed adjacent to the second ion doping area are used for generating electron-hole pairs in response to luminance of incident light;
- an oxide insulating layer disposed on the intrinsic layer, wherein the oxide insulating layer overlaps the intrinsic layer;
- and
- a metal film disposed on the oxide insulating layer, wherein the metal film is a gate, wherein an area of the metal film gate and oxide insulating layer overlapping the first light sensing region is smaller than an area of the first light sensing region which is not overlapped by the metal film gate and oxide insulating layer and wherein an area of the metal film gate and oxide insulating layer overlapping the second light sensing region is smaller than an area of the second light sensing region which is not overlapped by the metal film gate and oxide insulating layer.
A light sensor comprising:
- an intrinsic layer comprising a first light sensing region and a channel;
- a first ion doping area disposed at a one side of the intrinsic layer;
- a second ion doping area disposed at a another side of the intrinsic layer, wherein the first light sensing region adjacent to the first ion doping area is used for generating electron-hole pairs in response to luminance of incident light;
- an insulating layer disposed on the intrinsic layer;
- and
- a metal film overlapping the channel, wherein the metal film is a gate, wherein an area of the metal film gate overlapping the first light sensing region is smaller than an area of the first light sensing region which is not overlapped by the metal film gate.
Dependencies are inferred from the claim text.