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US 8,044,469 B2Granted
Semiconductor device and associated methods
AssigneeSamsung Electronics Co., Ltd.
InventorsHongbae Park, Hagju Cho, Sunghun Hong, Sangjin Hyun, Hoonjoo Na, Hyung-seok Hong
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Abstract
A semiconductor device and associated methods, the semiconductor device including a semiconductor substrate with a first well region, a first gate electrode disposed on the first well region, and a first N-type capping pattern, a first P-type capping pattern, and a first gate dielectric pattern disposed between the first well region and the first gate electrode.
Claims9
A semiconductor device, comprising:
- a semiconductor substrate with a first well region;
- a first gate electrode disposed on the first well region;
- and
- a first N-type capping pattern, a first P-type capping pattern, and a first gate dielectric pattern disposed between the first well region and the first gate electrode.
1 more element
Dependencies are inferred from the claim text.