Method for producing partial SOI structures comprising zones connecting a superficial layer and a substrate
AssigneeS.O.I.TEC Solicon On Insulator Technologies
InventorsBernard Aspar, Chrystelle Lagahe-Blanchard
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Abstract
The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises: a step of forming, on a first support, patterns in a first material, a step of forming a semiconductor layer, between and on said patterns, a step of assembling said semiconductor layer with a second support.
Claims8
Semiconductor device comprising a superficial layer, at least one buried layer, and a substrate, said buried layer comprising a first sublayer comprising an alternation of patterns made of a first material and zones made of a second, semiconductor material, and a second sublayer comprising zones of a third, semiconductor material of a first type of crystallinity and zones of the third, semiconductor material of a second type of crystallinity.
Dependencies are inferred from the claim text.