Method of manufacturing a trench transistor having a heavy body region
AssigneeFairchild Semiconductor Corporation
InventorsBrian S. Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean E. Probst
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Abstract
A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
Claims20
A trenched field effect transistor comprising:
- a semiconductor substrate;
- a trench extending a predetermined depth into said semiconductor substrate;
- a pair of doped source junctions, positioned on opposite sides of the trench;
- a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of said heavy body extending less deeply into said semiconductor substrate than said predetermined depth of said trench, and
- a doped well surrounding the heavy body beneath the heavy body
- wherein the depth of the doped heavy body region relative to the depth of the doped well is selected so that a peak electric field, when voltage is applied to the transistor, is spaced away from the trench.
A field effect transistor comprising:
- a semiconductor substrate;
- a gate trench extending a predetermined depth into the semiconductor substrate;
- a doped source region that forms a source junction inside a doped well;
- a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into the semiconductor substrate than the predetermined depth of the trench;
- wherein the doped well surrounds the heavy body beneath the heavy body;
- and
- wherein the depth of the doped heavy body region relative to the depth of the doped well is selected so that a peak electric field, when voltage is applied to the transistor, is spaced away from the trench.
Dependencies are inferred from the claim text.