Planar TMBS rectifier
AssigneeFairchild Semiconductor Corporation
InventorFred Session
Life of this patent
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Abstract
A monolithically integrated trench FET and Schottky diode includes a plurality of trenches extending into a FET region and a Schottky region of a semiconductor layer. A trench in the Schottky region includes a dielectric layer lining the trench sidewalls, and a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench. An interconnect layer electrically contacts the semiconductor layer in the Schottky region so as to form a Schottky contact with the semiconductor layer.
Claims7
A trench MOS barrier schottky (TMBS) rectifier comprising:
- a plurality of trenches extending into a semiconductor layer,
- a dielectric layer lining the trench sidewalls;
- a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench;
- and
- an interconnect layer comprising a conformal barrier metal layer which contacts the semiconductor layer so as to form a schottky contact with the semiconductor layer.
A trench MOS barrier schottky (TMBS) rectifier comprising:
- a plurality of trenches extending into a semiconductor layer,
- a dielectric layer lining the trench sidewalls;
- a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench;
- and
- an interconnect layer comprising a conformal barrier metal layer contacting the semiconductor layer so as to form a schottky contact with the semiconductor layer, the conformal barrier layer extending over and directly contacting the conductive electrode in each trench, a top surface of the conductive electrode in each trench being substantially coplanar with a top surface of the semiconductor layer such that the conformal barrier metal layer is substantially planar.
Dependencies are inferred from the claim text.