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AssigneeInfineon Technologies Austria AG
InventorsAnton Mauder, Hans-Joachim Schulze
Estimating the term…
A semiconductor device includes a semiconductor body defining a trench structure having walls. A plurality of vertical gate zones each have a gate electrode and a gate oxide that covers the walls of the trench structure. A body zone of a first conduction type is arranged between two of the gate zones and a drift zone of a complementary conduction type with respect to the first conduction type vertically adjoins the body zone. Floating shielding zones of the first conduction type are arranged adjacent to the gate zones and extend into the semiconductor body deeper than the trench structure of the gate zones. A pn junction with the drift zone is below the trench structure. A buried dopant zone of the same charge type as the drift zone has a higher impurity concentration than the drift zone and is arranged in a space charge region of the pn junction at a distance from the trench bottom of the trench structure.
A semiconductor device, comprising:
The semiconductor device of claim l, wherein the trench structure has a trench bottom that is covered with gate oxide and to which the shielding zone extends into the semiconductor body, wherein the gate oxide in the bottom region of the trench structure is adjoined by a conductive dopant zone within the shielding zone having an increased impurity concentration of the first conduction type.
A method for producing a semiconductor device, comprising:
Dependencies are inferred from the claim text.