Nonvolatile semiconductor memory device and producing method thereof

A nonvolatile semiconductor memory device comprising:

• a semiconductor substrate;
• and
• a cell array formed on the semiconductor substrate, including a plurality of first lines, a plurality of second lines intersecting the plurality of first lines, and a plurality of memory cells connected at intersections of the first and second lines between both lines,
• wherein the cell array includes:
• a memory cell region where the memory cells are formed;
• and
• a peripheral region that is provided around the memory cell region,
• in the memory cell region, the first lines are extended in parallel with a first direction, and the first lines are repeatedly formed at first intervals in a second direction orthogonal to the first direction,
• in the peripheral region, each of the first lines located at (4n−3)-th (n is a positive integer) and (4n−2)-th positions in the second direction from a predetermined position has a contact connecting portion on one end side in the first direction of the first line,
• in the peripheral region, each of the first lines located at (4n−1)-th and 4n-th positions in the second direction from the predetermined position has the contact connecting portion on the other end side in the first direction of the first line, and
• the contact connecting portion is formed so as to contact with a contact plug extended in a laminating direction.