Semiconductor device and method for manufacturing the same
AssigneeRohm Co., Ltd.
InventorsTominaga Koji, Iwamoto Kunihiko, Yasuda Tetsuji, Nabatame Toshihide
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Abstract
The present invention provides a high-quality semiconductor device in which deterioration in transistor characteristics and an increase in interface layer due to a gate insulating film are suppressed, and a method for manufacturing the same. In the present invention, an interface layer, a diffusion suppressing layer and a high dielectric constant insulating film are formed sequentially in this order on one surface of a silicon substrate.
Claims9
A semiconductor device comprising:
- a silicon substrate;
- an interface layer provided on the silicon substrate, the interface layer comprising a metal silicate;
- a diffusion suppressing layer provided on the interface layer;
- and
- a high dielectric constant insulating film provided on the diffusion suppressing layer;
- wherein the diffusion suppressing layer comprises nitrogen and a high-k metal element different from a metal constitutional element of the high dielectric constant insulating film.
A method for manufacturing a semiconductor device comprising:
- forming, on one surface of a silicon substrate, an initial layer which is a high dielectric constant metal element film for being mutually diffused with silicon in the silicon substrate;
- forming a diffusion suppressing layer on the surface of the initial layer;
- performing heat treatment to allow the high dielectric constant metal element film of the initial layer to be mutually diffused with silicon in the silicon substrate, thereby forming an interface layer comprising a metal silicate;
- and
- forming a high dielectric constant insulating film on the surface of the diffusion suppressing layer;
- wherein the diffusion suppressing layer comprises nitrogen and a high-k metal element different from a metal constitutional element of the high dielectric constant insulating film.
A method for manufacturing a semiconductor device comprising:
- forming, on one surface of a silicon substrate, an initial layer which is a high dielectric constant metal element film for being mutually diffused with silicon in the silicon substrate;
- forming a diffusion suppressing layer on the surface of the initial layer;
- forming a high dielectric constant insulating film on the surface of the diffusion suppressing layer;
- and
- performing heat treatment to allow the high dielectric constant metal element film of the initial layer to be mutually diffused with silicon in the silicon substrate, thereby forming an interface layer comprising a metal silicate;
- wherein the diffusion suppressing layer comprises nitrogen and a high-k metal element different from a metal constitutional element of the high dielectric constant insulating film.
Dependencies are inferred from the claim text.