Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising:

• forming a first impurity diffusion region in a surface layer of a semiconductor substrate;
• forming a first insulating film over the semiconductor substrate;
• forming a first hole in the first insulating film over the first impurity diffusion region by patterning the first insulating film;
• forming a conductive film on an inner surface of the first hole;
• forming a filler body over the conductive film and in the first hole, and making the filler body and the conductive film into a first contact plug, where at least upper surface of the filler body being made of amorphous insulating material, and the filer body having a thickness to fill the first hole, and the filler body being removed outside the first hole;
• and
• forming a capacitor by sequentially laminating, over the first contact plug, a lower electrode electrically connected to the conductive film, a capacitor dielectric film made of a ferroelectric material, and an upper electrode.

A method for manufacturing a semiconductor device, comprising:

• forming a first impurity diffusion region in a surface layer of a semiconductor substrate;
• forming a first insulating film over the semiconductor substrate;
• forming a first hole in the first insulating film over the first impurity diffusion region by patterning the first insulating film;
• forming a conductive film over an upper surface of the first insulating film and an inner surface of the first hole;
• forming a conductive material film, which has a thickness to fill the first hole, over the conductive film;
• forming a lower filler body made of the conductive material film in an intermediate depth of the first hole by reducing a thickness of the conductive material film;
• forming an amorphous insulating material film over the lower filler body and the conductive film;
• polishing each of the conductive film and the insulating material film to remove them from the upper surface of the first insulating film and to leave the insulating material film in the first hole as an upper filler body, and making the upper filler body, the lower filler body, and the conductive film into a first contact plug;
• and
• forming a capacitor by sequentially laminating, over the first contact plug, a lower electrode electrically connected to the conductive film, a capacitor dielectric film made of a ferroelectric material, and an upper electrode.