Photoelectric conversion device and method of manufacturing the same
AssigneeMitsubishi Electric Corporation
InventorsMasami Hayashi, Takashi Miyayama
Life of this patent
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Abstract
A photoelectric conversion device includes a thin film transistor that is placed on a substrate, a photodiode that is connected to a drain electrode of the thin film transistor and includes an upper electrode, a lower electrode and a photoelectric conversion layer placed between the upper and lower electrodes, a first interlayer insulating film that covers at least the upper electrode, a second interlayer insulating film that is placed in an upper layer of the first interlayer insulating film and covers the thin film transistor and the photodiode, and a line that is connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film.
Claims19
A photoelectric conversion device comprising:
- a thin film transistor placed on a substrate;
- a photodiode connected to a drain electrode of the thin film transistor and including an upper electrode, a lower electrode and a photoelectric conversion layer placed between the upper and lower electrodes;
- a first interlayer insulating film covering at least the upper electrode;
- a second interlayer insulating film placed in an upper layer of the first interlayer insulating film and covering the thin film transistor and the photodiode;
- and
- a line connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film.
A method of manufacturing a photoelectric conversion device comprising steps of:
- forming a thin film transistor on a substrate;
- forming a photodiode connected to a drain electrode of the thin film transistor and including an upper electrode, a lower electrode and a photoelectric conversion layer between the upper and lower electrodes, and a first interlayer insulating film covering at least the upper electrode;
- forming a second interlayer insulating film in an upper layer of the first interlayer insulating film so as to cover the thin film transistor and the photodiode;
- and
- forming a line connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film.
Dependencies are inferred from the claim text.