Light-emitting device and manufacturing method of the same
AssigneeDowa Electronics Materials Co., Ltd.
InventorsRyo Sakamoto, Masatoshi Iwata, Susumu Tsujikawa, Yoshiyuki Kobayashi
Life of this patent
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Abstract
A light-emitting device (1) is provided having a current blocking layer (9) of buried structure, a portion of the current blocking layer (9) having an oxygen concentration higher than that of a light-emitting layer, the current blocking layer being of a thickness of not less than 5 nm and not more than 100 nm. It includes an etching stop layer (24) below the current blocking layer (9), the etching stop layer being good in oxidation resistance. The light-emitting device (1) and its manufacturing method are provided such that the device has its current confinement effect improved and its output increased at lower forward voltage.
Claims7
A light-emitting device, comprising:
- a substrate;
- a light-emitting layer formed over said substrate;
- an etching stop layer formed over said light-emitting layer;
- and
- a current blocking layer formed on said etching stop layer, the current blocking layer including a surface oxide layer formed substantially only on a surface of said current blocking layer by oxidizing only the surface of said current blocking layer,
- wherein said etching stop layer has a composition of AlxGayIn1-x-yP, where 0≦x≦0.1, 0≦y≦1 and 0≦x+y≦1, or InyGa1-y, where 0≦y≦1, and
- wherein said current blocking layer has a composition of AlxGayIn1-x-yP, where 0.3≦x≦1, 0≦y≦1 and 0≦x+y≦1, and has a buried structure,
- wherein a portion of said current blocking layer has an oxygen concentration higher than that of said light-emitting layer, and
- wherein said current blocking layer has a thickness of not less than 5 nm and not more than 100 nm.
Dependencies are inferred from the claim text.