Nitride semiconductor light-emitting device comprising multiple semiconductor layers having substantially uniform N-type dopant concentration
AssigneePanasonic Corporation
InventorsAkihiko Ishibashi, Toshiya Yokogawa
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Abstract
A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate 10 and a nitride based semiconductor multilayer structure that has been formed on the semiconductor substrate 10. The multilayer structure includes an active layer 16 that produces emission and multiple semiconductor layers 12, 14 and 15 that have been stacked one upon the other between the active layer 16 and the substrate 10 and that include an n-type dopant. Each and every one of the semiconductor layers 12, 14 and 15 includes Al atoms.
Claims12
A nitride semiconductor light-emitting device comprising
- a nitride based semiconductor substrate, and
- a nitride based semiconductor multilayer structure that has been formed on the nitride based semiconductor substrate,
- wherein the nitride based semiconductor multilayer structure includes
- an active layer that produces emission, and
- multiple semiconductor layers that have been stacked one upon the other between the active layer and the nitride based semiconductor substrate and that include an n-type dopant,
- wherein each and every one of the multiple semiconductor layers includes Al atoms and a variation in a concentration of the n-type dopant in a layered region, which is defined by a thickness of 5 nm or less as measured from each interface between the multiple semiconductor layers, is 10% or less of an average concentration of the n-type dopant in the multiple semiconductor layers.
A nitride semiconductor light-emitting device comprising
- a nitride based semiconductor substrate, and
- a nitride based semiconductor multilayer structure that has been formed on the nitride based semiconductor substrate,
- wherein the nitride based semiconductor multilayer structure includes
- an active layer that produces emission, and
- multiple semiconductor layers that have been stacked one upon the other between the active layer and the nitride based semiconductor substrate and that include an n-type dopant,
- wherein each and every one of the multiple semiconductor layers includes Al atoms and a variation in a concentration of the n-type dopant in a layered region, which is defined by a thickness of 5 nm or less as measured from each interface between the multiple semiconductor layers, is 10% or less of an average concentration of the n-type dopant in the multiple semiconductor layers, and
- wherein one of the multiple semiconductor layers that contacts the nitride based semiconductor substrate includes Al atoms that account for 1 at % or less of its composition.
A method for fabricating a nitride semiconductor light-emitting device, the method comprising the steps of providing a nitride based semiconductor wafer and forming a nitride based semiconductor multilayer structure on the nitride based semiconductor wafer,
- wherein the step of forming the nitride based semiconductor multilayer structure includes stacking multiple semiconductor layers, including an active layer, on the nitride based semiconductor wafer, and
- wherein each of the multiple semiconductor layers that are located between the active layer and the nitride based semiconductor wafer includes an n-type dopant and Al atoms, and
- wherein a variation in a concentration of the n-type dopant in a layered region, which is defined by a thickness of 5 nm or less as measured from each interface between the multiple semiconductor layers, is 10% or less of an average concentration of the n-type dopant in the multiple semiconductor layers.
Dependencies are inferred from the claim text.