Light emitting diode submount with high thermal conductivity for high power operation

A LED device comprising:

• a supporting structure comprising at least two different layers of anodized aluminum oxide, a porous layer, a non-porous layer and an electrically conductive layer over said porous layer;
• and
• at least one LED chip bonded to said supporting structure, wherein said porous layer is formed first in an anodizing process followed by formation of said non-porous layer in a subsequent anodizing process, said at least one LED chip bonded to said electrically conductive layer, said electrically conductive layer formed by means of a lithographic process that uses a developer solution, said porous layer being resistant to said developer solution for more than 1 minute, wherein during the formation of the non-porous layer, said supporting structure is in an environment that is at a temperature that is within a range of about 50° C. to 90° C.