Light emitting device capable of removing height difference between contact region and pixel region and method for fabricating the same

A light emitting device comprising:

• a first substrate comprising a contact region and a pixel region;
• signal lines which are arranged on the first substrate to define the contact region and the pixel region, the signal lines comprising a plurality of scan lines, a first power line, and a second power line;
• a gate insulating layer which is disposed on the signal lines, the gate insulating layer comprising a first via-hole exposing a portion of the first power line, and a second via-hole exposing a portion of the second power line;
• a first contact layer disposed on the contact region of the gate insulating layer;
• a semiconductor layer disposed on the pixel region of the gate insulating layer;
• a second contact layer disposed on the first contact layer;
• a source electrode and a drain electrode disposed on portions of the semiconductor layer;
• a first metal line directly connecting a surface of the second contact layer with the first power line through the first via-hole;
• and
• a second metal line connecting the source electrode with the second power line through the second via-hole,
• wherein a combined thickness of the first contact layer and the second contact layer is substantially the same as a combined thickness of the semiconductor layer and the source electrode or the drain electrode, and
• wherein the surface of the second contact layer that directly connects the first metal line is separate from the first contact layer.