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US 8,044,425 B2Granted
Ultra-thin ohmic contacts for p-type nitride light emitting devices
AssigneeCree, Inc.
InventorsMark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael Bergmann, David Emerson, James Ibbetson, Ting Li
Life of this patent
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Abstract
A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.
Claims20
A semiconductor based Light Emitting Device (LED) comprising:
- a p-type nitride layer;
- and
- a metal ohmic contact, on the p-type nitride layer, the metal ohmic contact comprising an average thickness of less than about 5 Å and a specific contact resistivity less than about 10−3 ohm-cm2.
Dependencies are inferred from the claim text.