White light-emitting diode and its light conversion layer
AssigneeWei-Hung Lo
InventorsSoshchin Naum, Wei-Hung Lo, Chi-Ruei Tsai
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Abstract
The present invention discloses a white light-emitting diode based on In—Ga—N nitride heterojunction is characterized by that the light-emitting diode has primary blue light emission of a specific wavelength and a light conversion layer so as to generate white light. Further, the present invention also discloses a light conversion layer and its fluorine oxygen garnet phosphor powder.
Claims8
A light conversion layer, used in a white light-emitting diode to convert the blue light emitted from a In—Ga—N heterojunction into white light and based on phosphor powder and inorganic silicon polymer which has a molecular weight of M=15,000˜25,000 carbon units with a mass ratio of 15˜55% to the inorganic phosphor powder polymer and is solidified in a certain period at a specific temperature;
- wherein the phosphor powder is inorganic phosphor powder activated by cerium and is added with fluorine ions to substitute oxygen atoms in the crystal to have a stoichiometric formula:
- (ΣLn)3Al5O12-xF2x, wherein ΣLn is selected from a group consisting of Y, Gd, Lu, Tb, Ce and Pr and any combination thereof, and 0.001≦×≦1.5.
Dependencies are inferred from the claim text.