Display device
AssigneeAdvanced LCD Technologies Development Center Co., Ltd.
InventorGenshiro Kawachi
Life of this patent
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Abstract
An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device. An electronic device or a display includes a plurality of semiconductor devices which are formed by using a semiconductor thin film and are formed in the semiconductor thin film that is provided on an insulating substrate and is crystallized in a predetermined direction. The plurality of semiconductor devices include a MOS transistor and at least either one of a lateral bipolar thin-film transistor and a MOS-bipolar hybrid thin film transistor.
Claims8
A display device including a plurality of semiconductor devices which are formed by using a semiconductor thin film and are formed in the semiconductor thin film that is provided on an insulating substrate and is crystallized in a predetermined direction,
- wherein the display device includes a differential-input-type signal interface circuit,
- the differential-input-type signal interface circuit includes either one of at least one pair of lateral bipolar thin-film transistors and at least one pair of hybrid thin-film transistors, which are formed by using the semiconductor thin film, and at least one pair of MOS transistors which are formed by using the semiconductor thin film, and
- a maximum oscillation frequency of the hybrid thin-film transistor is higher than 2 GHz.
A display device comprising:
- an insulating substrate;
- a non-crystallized semiconductor thin film formed on the insulation substrate;
- at least one crystallized region which is crystallized in a lateral direction in the non-crystallized semiconductor thin film;
- and
- a differential-input-type signal interface circuit including a plurality of semiconductor devices at least parts of which are formed in the crystallized region,
- wherein the differential-input-type signal interface circuit includes either one of at least one pair of lateral bipolar thin film transistors and at least one pair of hybrid thin-film transistors, and at least one pair of MOS thin film transistors,
- wherein the MOS-bipolar hybrid thin film transistor has a source functioning as an emitter, a drain functioning as a collector, and a gate for forming a channel functioning as a base,
- wherein a base of the lateral bipolar thin film transistor and/or the base of the MOS-bipolar hybrid thin film transistor and/or a channel of the MOS transistor and/or the channel the MOS-bipolar hybrid thin film transistor are respectively formed within crystal grains in the one crystallized region so that no crystal grain boundary is present in the base and/or the channel, and
- wherein the base of at least one of the MOS-bipolar hybrid thin film transistor and the lateral bipolar thin film transistor has a base length of 2 μm or less.
Dependencies are inferred from the claim text.