Back to results
US 8,044,402 B2Granted
Amorphous insulator film and thin-film transistor
AssigneeCanon Kabushiki Kaisha
InventorsHisato Yabuta, Nobuyuki Kaji, Ryo Hayashi
Life of this patent
Estimating the term…
Abstract
An amorphous insulator film is provided which is composed of silicon (Si) oxide, in which the amorphous insulator film includes Ar and an amount of Ar included therein is equal to or larger than 3 at. % in terms of atomic ratio with respect to Si.
Claims8
An amorphous insulator film which is used as a gate-insulator film of a thin-film transistor and comprises silicon oxide, wherein
- the amorphous insulator film includes Ar;
- Ar is included therein in an amount of equal to or larger than 3 at. % and equal to or smaller than 17 at. % in terms of atomic ratio with respect to Si;
- and
- the amorphous insulator film has density which increases with the amount of Ar increases.
1 more element
Dependencies are inferred from the claim text.