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US 8,044,391 B2Granted
Thin film transistor and method of fabricating the same
AssigneeLG Display Co., Ltd.
InventorsGee-Sung Chae, Mi-Kyung Park
Life of this patent
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Abstract
A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.
Claims16
A thin film transistor, comprising:
- a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion;
- a fixing layer on the central portion of the multi-coaxial silicon nanowire unit and the substrate, wherein the fixing layer secures the multi-coaxial silicon nanowire unit to the substrate and wherein the multi-coaxial silicon nanowire unit and the substrate are positioned under the fixing layer;
- a gate electrode on the fixing layer;
- a source electrode and a drain electrode on the respective end portions so as to electrically connect to the multi-coaxial silicon nanowire unit;
- and
- wherein the fixing layer includes an organic insulating material and the organic insulating material includes one of benzocyclobutene (BCB) and acrylic resin.
3 more elements
An array substrate including a thin film transistor, comprising:
- a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion;
- a fixing layer on the central portion of the multi-coaxial silicon nanowire unit and the substrate, wherein the fixing layer secures the multi-coaxial silicon nanowire unit to the substrate and wherein the multi-coaxial silicon nanowire unit and the substrate are positioned under the fixing layer;
- a gate electrode on fixing layer;
- a first source electrode and a first drain electrode on the respective end portions so as to electrically connect to the multi-coaxial silicon nanowire unit;
- a second source electrode connected to the first source electrode and a second drain electrode connected to the first drain electrode;
- a pixel electrode connected to the second drain electrode;
- and
- wherein the fixing layer includes an organic insulating material and the organic insulating material includes one of benzocyclobutene (BCB) and acrylic resin.
5 more elements
Dependencies are inferred from the claim text.