Back to results
US 8,044,387 B1Granted
Semiconductor device built on plastic substrate
AssigneeSpansion LLC
InventorsMatthew S. Buynoski, Uzodinma Okoroanyanwu, Suzette K. Pangrle, Nicholas H. Tripsas
Life of this patent
Estimating the term…
Abstract
Disclosed are semiconductor memory devices containing a plastic substrate and at least one active device supported by the plastic substrate, the active device containing an organic semiconductor material. The semiconductor memory devices containing a plastic substrate may further contain a polymer dielectric and/or a conductive polymer.
Claims20
A semiconductor memory device, comprising:
- a plastic substrate;
- and
- at least one active device supported by the plastic substrate, the active device comprising a first and a second electrodes with an organic semiconductor material and a passive layer between the first and the second electrodes, the passive layer comprising material selected from a group consisting of copper sulfide, copper rich copper sulfide, copper oxide, copper selenide, copper telluride, manganese oxide, titanium dioxide, indium oxide, silver sulfide, iron oxide, cobalt arsenide, and nickel arsenide.
A semiconductor memory device, comprising:
- a plastic substrate;
- at least one active device supported by the plastic substrate, the active device comprising a first and a second electrodes with an organic semiconductor material and a passive layer between the first and the second electrodes, the passive layer comprising material selected from a group consisting of copper sulfide, copper rich copper sulfide, copper oxide, copper selenide, copper telluride, manganese oxide, titanium dioxide, indium oxide, silver sulfide, iron oxide, cobalt arsenide, and nickel arsenide;
- and
- a polymer dielectric material over the plastic substrate.
1 more element
A semiconductor memory device, comprising:
- a plastic substrate;
- at least one active device supported by the plastic substrate, the active device comprising a first and a second electrodes with an organic semiconductor material and a passive layer between the first and the second electrodes, the passive layer comprising material selected from a group consisting of copper sulfide, copper rich copper sulfide, copper oxide, copper selenide, copper telluride, manganese oxide, titanium dioxide, indium oxide, silver sulfide, iron oxide, cobalt arsenide, and nickel arsenide;
- a polymer dielectric material over the plastic substrate;
- and
- a conductive polymer adjacent at least one active device.
2 more elements
Dependencies are inferred from the claim text.