Nitride semiconductor light emitting device and fabricating method thereof

A semiconductor light emitting device, comprising:

• a first conductive type semiconductor layer;
• an active layer formed on the first conductive type semiconductor layer,
• wherein the active layer is a multi-quantum well structure having a plurality of well layers alternatively stacked with a plurality of barrier layers;
• and
• a second conductive type semiconductor layer formed on the active layer,
• wherein a first well layer of the plurality of well layers has a composition of InXGa1-XN (0≦x≦1) with an In (Indium) composition ratio of 10-20%,
• wherein a first barrier layer of the plurality of the barrier layers is formed on the first well layer and has a composition of InYGa1-YN (0≦Y≦1) with an In (Indium) composition ratio of less than 10%,
• wherein the active layer comprises 4 to 10 pairs of periodically repeated well layers and barrier layers, each pair including a corresponding barrier layer on a corresponding well layer,
• wherein one of the pairs of periodically repeated well layers and barrier layers comprises a seed layer of InN, and
• wherein an upper surface of the seed layer is in direct contact with a lower surface of the corresponding well layer and a lower surface of the seed layer is in direct contact with an upper surface of the corresponding barrier layer.