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US 8,044,385 B2Granted
Semiconductor light emitting device and method for manufacturing the same
AssigneeLG Innotek Co., Ltd.
InventorKyung Jun Kim
Life of this patent
Estimating the term…
Abstract
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.
Claims20
A semiconductor light emitting device comprising:
- a substrate;
- a first conductive semiconductor layer including a first type dopant on the substrate;
- an active layer on the first conductive semiconductor layer, wherein the active layer includes a single quantum well structure or a multi-quantum well structure having a quantum barrier layer and a quantum well layer on the quantum well layer;
- a first super lattice layer disposed between the substrate and the active layer, wherein the first super lattice layer includes at least one pair of at least two semiconductor layers which have a composition of Aly(GaxIn1-x)1-yN (0≦X,Y≦1);
- a second super lattice layer on the active layer, wherein the second super lattice layer includes at least one pair of at least two semiconductor layers which have a composition of Aly(GaxIn1-x)1-yN(0≦X,Y≦1);
- and
- a second conductive semiconductor layer including a second type dopant on the second super lattice layer.
4 more elements
A lighting device comprising:
- a semiconductor light emitting device comprising,
- a substrate;
- a first conductive semiconductor layer including a first type dopant on the substrate;
- an active layer on the first conductive semiconductor layer, wherein the active layer includes a single quantum well structure or a multi-quantum well structure having a quantum barrier layer and a quantum well layer on the quantum well layer;
- a first super lattice layer disposed between the substrate and the active layer, wherein the first super lattice layer includes at least one pair of at least two semiconductor layers which have a composition of Aly(GaxIn1-x)1-yN(0≦X,Y≦1);
- a second super lattice layer on the active layer, wherein the second super lattice layer includes at least one pair of at least two semiconductor layers which have a composition of Aly(GaxIn1-x)1-yN(0≦X,Y≦1);
- and
- a second conductive semiconductor layer including a second type dopant on the second super lattice layer.
5 more elements
A display device comprising:
- a semiconductor light emitting device comprising,
- a substrate;
- a first conductive semiconductor layer including a first type dopant on the substrate;
- an active layer on the first conductive semiconductor layer, wherein the active layer includes a single quantum well structure or a multi-quantum well structure having a quantum barrier layer and a quantum well layer on the quantum well layer;
- a first super lattice layer disposed between the substrate and the active layer, wherein the first super lattice layer includes at least one pair of at least two semiconductor layers which have a composition of Aly(GaxIn1-x)1-yN(0≦X,Y≦1);
- a second super lattice layer on the active layer, wherein the second super lattice layer includes at least one pair of at least two semiconductor layers which have a composition of Aly(GaxIn1-x)1-yN(0≦X,Y≦1);
- and
- a second conductive semiconductor layer including a second type dopant on the second super lattice layer.
5 more elements
Dependencies are inferred from the claim text.