Back to results
US 8,044,384 B2Granted
Group III nitride based quantum well light emitting device structures with an indium containing capping structure
AssigneeCree, Inc.
InventorsMichael John Bergmann, David Todd Emerson
Life of this patent
Estimating the term…
Abstract
Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.
Claims35
A light emitting diode, comprising
- an n-type Group III nitride layer;
- a Group III nitride light emitting diode active region on the n-type Group III nitride layer, wherein the light emitting diode active region provides photon emission due to carrier recombination therein;
- and
- an undoped quaternary Group III nitride capping layer on the light emitting diode active region opposite from the n-type Group III nitride layer, wherein the undoped quaternary Group III nitride capping layer is a distinct layer from the light emitting diode active region and is directly on a binary Group III nitride layer.
1 more element
A light emitting diode, comprising:
- an n-type Group III nitride layer;
- a Group III nitride light emitting diode active region on the n-type Group III nitride layer, wherein the light emitting diode active region provides photon emission due to carrier recombination therein;
- and
- an undoped quaternary Group III nitride capping layer on the light emitting diode active region opposite from the n-type Group III nitride layer, wherein the undoped quaternary Group III nitride capping layer is a distinct layer from the active region and comprises:
- a first layer of InxAlyGa1-x-yN, where 0<x≦0.2 and 0≦y≦0.4;
- and
- a second layer of InwAlzGa1-w-zN, where 0<w≦0.2 and y≦z<1.
4 more elements
A light emitting diode, comprising:
- an n-type Group III nitride layer;
- a Group III nitride light emitting diode active region on the n-type Group III nitride layer, the light emitting diode active region comprising a multi-quantum well structure including alternating quantum well layers and quaternary barrier layers;
- and
- a quaternary Group III nitride capping layer on the light emitting diode active region opposite from the n-type Group III nitride layer, wherein the quaternary Group III nitride capping layer is a distinct layer from the light emitting diode active region and is directly on a quaternary barrier layer of the light emitting diode active region.
1 more element
A light emitting diode, comprising:
- an n-type Group III nitride layer;
- a Group III nitride light emitting diode active region on the n-type Group III nitride layer, the light emitting diode active region comprising a multi-quantum well structure including alternating quantum well layers and quaternary barrier layers;
- a quaternary Group III nitride capping layer on the light emitting diode active region opposite from the n-type Group III nitride layer;
- and
- a binary Group III nitride layer between the light emitting diode active region and the quaternary Group III nitride capping layer,
- wherein the quaternary Group III nitride capping layer is directly on the binary Group III nitride layer.
3 more elements
A light emitting diode, comprising:
- an n-type Group III nitride layer;
- a Group III nitride light emitting diode active region on the n-type Group III nitride layer, the light emitting diode active region comprising a multi-quantum well structure including alternating quantum well layers and quaternary barrier layers, wherein the quantum well layers comprise indium gallium nitride (InGaN), wherein the quaternary barrier layers comprise aluminum indium gallium nitride (AlInGaN), and wherein an indium (In) composition of the barrier layers is less than that of the quantum well layers;
- and
- a quaternary Group III nitride capping layer on the light emitting diode active region opposite from the n-type Group III nitride layer.
1 more element
A light emitting diode, comprising
- an n-type Group III nitride layer;
- a Group III nitride light emitting diode active region on the n-type Group III nitride layer, the light emitting diode active region comprising at least one quantum well structure;
- and
- an undoped quaternary Group III nitride capping layer on the light emitting diode active region opposite from the n-type Group III nitride layer, wherein the undoped quaternary Group III nitride capping layer has a higher bandgap than the at least one quantum well structure of the light emitting diode active region and wherein the undoped quaternary Group III nitride capping layer is directly on a binary Group III nitride layer.
1 more element
A light emitting diode, comprising:
- an n-type Group III nitride layer;
- a Group III nitride based superlattice on the n-type Group III nitride layer, the superlattice having at least two periods of alternating layers;
- a Group III nitride based light emitting diode active region on the superlattice opposite the n-type Group III nitride layer, wherein the light emitting diode active region provides photon emission due to carrier recombination therein;
- and
- a Group III nitride capping layer including aluminum (Al) on the light emitting diode active region, the Group III nitride capping layer having a higher Al composition in a region distal from the light emitting diode active region than is present in a region proximate the light emitting diode active region.
2 more elements
A light emitting diode, comprising
- an n-type Group III nitride layer;
- a Group III nitride light emitting diode active region on the n-type Group III nitride layer, the light emitting diode active region comprising at least one quantum well layer and at least one barrier layer;
- and
- an undoped quaternary Group III nitride capping layer on the light emitting diode active region opposite from the n-type Group III nitride layer, wherein the undoped quaternary Group III nitride capping layer is a distinct layer from the light emitting diode active region and is directly on a barrier layer of the light emitting diode active region.
1 more element
Dependencies are inferred from the claim text.