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US 8,044,383 B2Granted
Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes
AssigneeThe Regents of the University of California
InventorsHong Zhong, Anurag Tyagi, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Abstract
A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.
Claims15
A light emitting diode (LED), comprising:
- one or more p-type layers having a thickness of 100 nm or less;
- one or more n-type layers;
- and
- an active layer positioned between the p-type layers and the n-type layers;
- wherein the p-type layers, the n-type layers and the active layer are comprised of semi-polar nitride based material,
- wherein the active layer does not include an electron blocking layer, and
- wherein the LED does not contain an AlGaN electron blocking layer.
4 more elements
A method for fabricating a light emitting diode (LED), comprising:
- (a) depositing one or more n-type layers on or above a substrate;
- (b) depositing an active layer, for emitting light, on or above the n-type layer;
- and
- (c) depositing one or more p-type layers on or above the active layer, to a thickness of 100 nm or less;
- wherein the p-type layers, n-type layers and active layer are comprised of semi-polar nitride based material,
- wherein the active layer does not include an electron blocking layer, and
- wherein the LED does not contain an A1GaN electron blocking layer.
4 more elements
Dependencies are inferred from the claim text.