Light-emitting device and method for manufacturing the same

A light-emitting device comprising:

• a light-emitting layer including a quantum dot;
• a first conductive member supplying an electron to the light-emitting layer through an n-type quantum dot;
• and
• a second conductive member supplying a hole to the light-emitting layer through a p-type quantum dot.

A method for manufacturing a light-emitting device comprising:

• a first step of depositing a first conductive member including a quantum dot on one principal surface of a semiconductor substrate;
• a second step of depositing a second conductive member including a quantum dot on the first conductive member;
• a third step of depositing a third conductive member including a quantum dot on the second conductive member;
• a fourth step of introducing an impurity of a first conduction type into the first conductive member;
• a fifth step of introducing an impurity of a second conduction type that is different from the first conduction type into the third conductive member;
• and
• a sixth step of heat-treating the first conductive member including the impurity of the first conduction type and the third conductive member including the impurity of the second conduction type.