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US 8,044,380 B2Granted
Nitride semiconductor light emitting device and fabrication method thereof
AssigneeLG Innotek Co., Ltd.
InventorSuk Hun Lee
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Abstract
Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a “C (carbon)”-doped second nitride semiconductor layer formed above the active layer. According to the present invention, the crystallinity of the active layer is enhanced, and the optical power and the operation reliability are enhanced.
Claims23
A nitride semiconductor light emitting device comprising:
- a first nitride semiconductor layer;
- an active layer formed above the first nitride semiconductor layer;
- and
- a “C (carbon)”-doped second nitride semiconductor layer formed above the active layer,
- wherein the “C”-doped second nitride semiconductor layer comprises an undoped GaN layer directly contacted with the active layer;
- a “C”-doped p-GaN layer on the undoped GaN layer;
- wherein the first nitride semiconductor layer is formed in a super lattice structure of AlGaN/n-GaN or in an n-GaN layer doped with Si and In, and fomed having at least one period;
- and
- wherein the first nitride semiconductor layer is formed in the super lattice structure of AlGaN/n-GaN, wherein the super lattice structure of AlGaN/n-GaN has one periodic thickness range of 250˜500 Å.
6 more elements
A nitride semiconductor light emitting device comprising:
- a first nitride semiconductor layer used as a first electrode contact layer;
- an active layer formed above the first nitride semiconductor layer;
- a “C”-doped second nitride semiconductor layer formed above the active layer, wherein the “C”-doped second nitride semiconductor layer comprises an undoped GaN layer directly contacted with the active layer and a “C”-doped p-GaN layer on the undoped GaN layer;
- an n-type third nitride semiconductor layer formed above the “C”-doped second nitride semiconductor layer and used as a second electrode contact layer;
- wherein the “C”-doped p-GaN layer is formed by a delta doping where a TMGa MO source dose is varied;
- wherein the TMGa MO source dose is increased at least twice when the “C”-doped p-GaN layer is grown.
3 more elements
Dependencies are inferred from the claim text.