Compositions for cleaning ion implanted photoresist in front end of line applications
AssigneeAvantor Performance Materials, Inc.
InventorsSean Michael Kane, Steven A. Lippy
Life of this patent
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Abstract
A front end of the line (FEOL) stripping and cleaning composition for cleaning unashed ion-implanted photoresist from a wafer substrate comprises: a) at least one organic stripping solvent, b) fluoride ions from at least one of ammonium fluoride, ammonium bifluoride or hydrogen fluoride, c) at least one acidifying agent selected from inorganic or organic acids, and d) water, with an oxidizing agent optionally also being present in the composition.
Claims9
A FEOL stripping and cleaning method for stripping/cleaning unashed ion-implanted photoresist from a wafer substrate, the process comprising conducting the process without supercritical CO2 and comprises contacting the unashed ion-implanted photoresist on a wafer substrate with a FEOL stripping/cleaning composition for a time sufficient to clean the wafer substrate of the unashed ion-implanted photoresist, wherein the FEOL stripping/cleaning composition comprises:
- a) at least one organic stripping solvent,
- b) fluoride ions from at least one of ammonium fluoride, ammonium bifluoride and hydrogen fluoride,
- c) at least one acidifying agent selected from inorganic or organic acids other than HF,
- d) water, and
- e) at least one oxidizing agent:
- wherein the at least one acidifying agent selected from inorganic or organic acids other than HF is present in an amount to produce an overall acidic solution of pH>5.
Dependencies are inferred from the claim text.