Methods for making and using halosilylgermanes
AssigneeArizona Board of Regents, a body corporate acting for and on behalf of Arizona State University
InventorsJohn Kouvetakis, Jesse Tice, Yan-Yan Fang
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Abstract
The invention provides compounds of, and methods for the preparation of compounds of, the molecular formula, SixGeyHz—aXa; wherein X is halogen, and x, y, z, and a are defined herein, and methods for the deposition of high-Ge content Si films on silicon substrates using compounds of the invention.
Claims76
A method for the preparation of compounds of the formula (I),
- SixGeyHz-aXa (I)
- wherein x is 1, 2, 3, or 4;
- y is 1, 2, 3, or 4;
- z is 2(x+y+1);
- a is 1 to z;
- and X is halogen, provided that the sum of x and y is less than or equal to 5, comprising the step of, (i) treating a compound of the molecular formula, SixGeyHz, with a compound of the formula BX3, AlX3, or a metal chlorinating agent, at a temperature of about −80° C. to about 25° C.
A method for the preparation of compounds of the formula,
- SixGeyHz-1X
- wherein x is 1, 2, 3, or 4;
- y is 1, 2, 3, or 4;
- z is 2(x+y+1);
- a is 1 to 3×;
- and X is halogen, provided that (i) X is bonded only to Si;
- and (ii) the sum of x and y is less than or equal to 5,
- comprising the steps of,
- (i) contacting a compound of the formula,
- SixGeyHz-1Y
- wherein Y is —OSO2R1, wherein R1 is C1-C6 haloalkyl, C1-C6 alkyl, or phenyl, wherein the alkyl and phenyl are optionally substituted with 1 to 4 groups which are each independently halogen, C1-C2 haloalkyl, C1-C3 alkyl, cyano, nitro, C1-C3 alkoxy, —C(O)C1-C3 alkoxy, —C(O)C1-C3 alkyl, —S(O)C1-C3 alkyl, or —S(O)2C1-C3 alkyl;
- provided that Y is bonded only to Si;
- with a compound of the formula CsX at a temperature of about −50° C. to about 40° C.
A method for preparing a layer of the formula, SidGe1-d, on a substrate, comprising
- contacting the substrate with a chemical vapor comprising a compound of the formula,
- SixGeyHz-aXa
- wherein x is 1, 2, 3, or 4;
- y is 1, 2, 3, or 4;
- z is 2(x+y+1);
- a is 1 to z;
- and X is halogen, provided that the sum of x and y is less than or equal to 5, at a temperature and a pressure sufficient for depositing a SidGe1-d layer over the substrate, wherein d is greater than 0 and less than 1.
A method for the selective deposition of a SidGe1-d layer comprising contacting a substrate having a surface layer comprising at least two portions, wherein a first portion of the surface layer comprises a semiconductor surface layer and a second portion of the surface layer comprises an oxide, nitride, or oxynitride surface layer, with a chemical vapor comprising a compound of the molecular formula,
- SixGeyHz-aXa
- wherein x is 1, 2, 3, or 4;
- y is 1, 2, 3, or 4;
- z is 2(x+y+1);
- a is 1 to z;
- and X is halogen, provided that the sum of x and y is less than or equal to 5, under conditions sufficient to selectively deposit a SidGe1-d layer, having a predetermined thickness and at a predetermined rate, over only the first portion of the surface, wherein d is greater than 0 and less than 1.
A compound according to the formula,
- SixGeyHz-aXa
- wherein x is 1, 2, 3, or 4;
- y is 1, 2, 3, or 4;
- z is 2(x+y+1);
- a is 1 to 2(x+y), and X is halogen, provided that (i) the sum of x and y is less than or equal to 5;
- (ii) each Si and Ge atom has no more than two X groups bonded thereto;
- and (iii) the compound is not
- bromo(germyl)silane;
- difluoro(germyl)silane;
- 1,1,2,2,3,3-hexafluoro-(1-germyl)trisilane;
- (difluorogermyl)difluorosilane;
- dichloro(germyl)silane;
- 1,1,2,2-tetrafluoro-(1-germyl)disilane;
- fluoro(fluorogermyl)silane;
- fluoro(germyl)silane;
- 1,1-dichloro-(3-germyl)trisilane;
- 1,1-dichloro-(4-germyl)tetrasilane;
- and
- 1,1-dichloro-(2-germyl)disilane.
A substantially pure compound according to the formula,
- SiGeyHz-aCla
- wherein y is 1, 2, 3, or 4;
- z is 2(y+2);
- and a is 1 to 3, provided that each Cl is bonded only to Si.
Dependencies are inferred from the claim text.