Adhesion to copper and copper electromigration resistance

A method for improving adhesion of a semiconductor device comprising steps of:

• (a) providing a substrate in a processing chamber;
• wherein the substrate comprises at least one patterned dielectric layer and at least one patterned conductive metal layer;
• (ab) exposing the substrate to a pre-treatment;
• and
• (b) introducing an organometallic precursor to the processing chamber to selectively deposit an adhesion layer on the at least one patterned conductive metal layer;
• wherein
• the organometallic precursor is selected from the group consisting of organozinc, organosilver, organochromium, organotin, organomanganese, organonickel, organocobalt , organoaluminum, and mixtures thereof;
• and
• steps (ab) and (b) are repeated until a desired thickness of the adhesion layer is achieved.