Method for manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising:

• forming a first layer over a substrate;
• forming a second layer over the first layer, wherein the second layer has a first region and a second region;
• forming a third layer over the second layer, wherein the third layer has a third region over and in contact with the first region and a fourth region over and in contact with the second region;
• selectively removing a surface of the first region and the third region, by selectively irradiating the first region with a laser beam via the third region, using an electrooptic element as an adjustable mask;
• and
• selectively etching a remaining portion of the first region and the first layer, using the fourth region as a mask,
• wherein the second layer is capable of absorbing the laser beam, and
• wherein the third layer is capable of transmitting the laser beam.

A method of manufacturing a semiconductor device comprising:

• forming a first layer over a substrate;
• forming a second layer over the first layer, wherein the second layer has a first region and a second region;
• forming a third layer over the second layer, wherein the third layer has a third region over and in contact with the first region and a fourth region over and in contact with the second region;
• selectively removing the first region and the third region, by selectively irradiating the first region with a laser beam via the third region, using an electrooptic element as an adjustable mask;
• and
• selectively etching the first layer, using the fourth region as a mask,
• wherein the second layer is capable of absorbing the laser beam, and
• wherein the third layer is capable of transmitting the laser beam.