Method for monitoring patterning integrity of etched openings and forming conductive structures with the openings

A method of forming a contact on a semiconductor chip, said method comprising:

• providing a semiconductor substrate having top surface and comprising a diffusion region at said top surface;
• forming a dielectric layer on said top surface of said semiconductor substrate adjacent to said diffusion region;
• patterning and etching a contact opening in said dielectric layer above said diffusion region;
• performing an electroplating process using an electroplating solution and a current applied to said semiconductor substrate to establish an electron flow through said semiconductor substrate to said diffusion region;
• and
• during said electroplating process, monitoring said electron flow to determine if said electron flow passes into said electroplating solution causing plating to occur in said contact opening and indicating that said contact opening extends through said dielectric layer to said diffusion region.

A method of forming a conductive structure on a semiconductor chip, said method comprising:

• providing a substrate comprising a semiconductor layer and a metal layer above and electrically connected to said semiconductor layer;
• forming a dielectric layer on a top surface of said substrate adjacent to said metal layer;
• patterning and etching an opening in said dielectric layer above said metal layer;
• performing an electroplating process using an electroplating solution and a current applied to said semiconductor layer to establish an electron flow through said semiconductor layer to said metal layer;
• and
• during said electroplating process, monitoring said electron flow to determine if said electron flow passes into said electroplating solution causing plating to occur in said opening and indicating that said opening extends through said dielectric layer to said metal layer.