Semiconductor device manufacturing method and semiconductor device manufacturing apparatus

A method for manufacturing a semiconductor device comprising steps of:

• superimposing an insulation layer on a semiconductor substrate including an element region;
• forming a recess in the insulation layer;
• embedding a metal layer in the recess;
• planarizing a surface of the insulation layer and a surface of the metal layer to be substantially flush with each other;
• and
• forming a metal cap layer of which a main component is zirconium boron nitride on the surface of the insulation layer and the surface of the metal layer after the step of planarizing, wherein:
• the step of forming metal cap layer is performed in a reaction chamber;
• and
• the step of forming a metal cap layer includes:
• exciting a gas containing nitrogen with a microwave outside the reaction chamber;
• and
• forming the metal cap layer by supplying the excited gas containing nitrogen and a gas containing zirconium to the reaction chamber.