Metal wire for a semiconductor device formed with a metal layer without voids therein and a method for forming the same
AssigneeHynix Semiconductor Inc.
InventorsDong Ha Jung, Baek Mann Kim, Soo Hyun Kim, Young Jin Lee, Sun Woo Hwang, Jeong Tae Kim
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Abstract
A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO2 layer formed on a surface of the damascene pattern and an Al deposit-inhibiting layer formed on a portion of the RuO2 layer in both-side upper portion of the damascene pattern; and a wiring metal layer including Al formed on the diffusion barrier layer by MOCVD method in order to fill the damascene pattern.
Claims10
A method for forming a metal wiring of a semiconductor device comprising the steps of:
- forming an insulation layer provided with a damascene pattern over a semiconductor substrate;
- forming a Ru layer on the insulation layer provided with the damascene pattern;
- forming a first metal layer on the Ru layer of upper portion of the damascene pattern excluding the Ru layer of lower portion of the damascene pattern by a sputtering method;
- forming a RuO2 layer and an Al deposit-inhibiting layer by oxidizing the Ru layer and the first metal layer so as to form a diffusion barrier layer composed of the RuO2 layer and the Al deposit-inhibiting layer;
- and
- forming a second matal layer including Al for wiring on the diffusion barrier layer by a MOCVD method in order to fill the damascene pattern.
Dependencies are inferred from the claim text.