US 8,043,960 B2 · Contact structure of semiconductor devices and method of fabricating the same

Abstract

A contact structure includes a lower conductive pattern disposed on a predetermined region of a semiconductor substrate. The lower conductive layer has a concave region at a predetermined region of a top surface thereof. An embedding conductive layer fills the concave region. The top surface of the embedding conductive layer is placed at least as high as the height of the flat top surface of the lower conductive pattern. A mold layer is disposed to cover the semiconductor substrate, the lower conductive pattern and the embedding conductive layer. An upper conductive pattern is arranged in an intaglio pattern. The intaglio pattern is disposed in the mold layer to expose a predetermined region of the embedding conductive layer.

Claims22

Dependent claims

A method for fabricating a contact structure of a semiconductor device comprising the steps of:

forming a lower conductive pattern over a predetermined region of a semiconductor substrate;
forming a mold layer over the semiconductor substrate including the lower conductive pattern;
forming an intaglio pattern by patterning the mold layer, wherein the intaglio pattern exposes a predetermined region of the lower conductive pattern;
forming a concave region at a predetermined region of a top surface of the lower conductive pattern by performing a post-treatment process at the semiconductor substrate including the intaglio pattern;
forming an embedding conductive layer filling the concave region, wherein edges of the concave region are placed under the mold layer such that the embedding conductive layer further fills the edges of the concave region;
and
forming an upper conductive pattern filling the intaglio pattern.

4 more elements

A contact structure of a semiconductor device fabricated by a method comprising the steps of:

forming a lower conductive pattern over a predetermined region of a semiconductor substrate;
forming a mold layer over the semiconductor substrate including the lower conductive pattern;
forming an intaglio pattern by patterning the mold layer, wherein the intaglio pattern exposes a predetermined region of the lower conductive pattern;
forming a concave region at a predetermined region of a top surface of the lower conductive pattern by performing a post-treatment process at the semiconductor substrate including the intaglio pattern;
forming an embedding conductive layer filling the concave region, wherein edges of the concave region are placed under the mold layer such that the embedding conductive layer further fills the edges of the concave region;
and
forming an upper conductive pattern filling the intaglio pattern.

4 more elements

Dependencies are inferred from the claim text.

Contact structure of semiconductor devices and method of fabricating the same

Life of this patent

Contact structure of semiconductor devices and method of fabricating the same

Life of this patent

Abstract

Claims22