Semiconductor device, method for manufacturing semiconductor device and apparatus for manufacturing semiconductor

A method for manufacturing a semiconductor device including a multilayer wiring comprising:

• a semiconductor substrate;
• an insulating film formed on the semiconductor substrate, at least one part of the insulating film being formed of a first insulating film and a second insulating film;
• a wiring groove and a via hole formed in the insulating film;
• a wire and a connecting plug formed from a metal respectively filled in the wiring groove and the via hole;
• and
• a modified layer formed on an interface between the first insulating film and the metal and an interface between the first insulating film and the second insulating film,
• wherein the first insulating film is at least one layer insulating film including a siloxane structure containing silicon, oxygen and carbon,
• the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms, and
• the modified layer contains a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film, the method comprising:
• forming the second insulating film containing a cyclic siloxane structure containing silicon, oxygen and carbon;
• forming the modified layer by performing modification treatment onto a surface of the second insulating film;
• forming the first insulating film on the modified layer;
• forming a hard mask film on the first insulating film;
• applying a photoresist to the hard mask film and then patterning a groove thereon;
• forming a mask pattern through forming a groove in the hard mask film by a dry etching using the photoresist as a mask;
• removing the photoresist by an oxygen ashing;
• forming the wiring groove and the via hole in the first insulating film and the second insulating film by a dry etching using the mask pattern as a mask;
• forming the modified layer by performing modification treatment onto side faces of the wiring groove and the via hole in the first insulating film and the second insulating film;
• and
• forming the wire and the connecting plug respectively by filling the wiring groove and the via hole with the metal.