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US 8,043,956 B2Granted
Wire bonding on reactive metal surfaces of a metallization of a semiconductor device by providing a protective layer
AssigneeGlobalfoundries Inc.
InventorsMatthias Lehr, Frank Kuechenmeister
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Abstract
In semiconductor devices having a copper-based metallization system, bond pads for wire bonding may be formed directly on copper surfaces, which may be covered by an appropriately designed protection layer to avoid unpredictable copper corrosion during the wire bond process. A thickness of the protection layer may be selected such that bonding through the layer may be accomplished, while also ensuring a desired high degree of integrity of the copper surface.
Claims12
A method, comprising:
- forming a dielectric layer stack above a metallization layer formed above a substrate of a semiconductor device, said metallization layer comprising a contact region having a copper-containing surface for receiving a bond wire;
- forming an opening in said dielectric layer stack to expose a portion of said copper-containing surface;
- forming a protection layer at least on said exposed portion of said copper-containing surface;
- and
- attaching a lead wire to said exposed portion of said copper-containing surface in the presence of said protection layer.
2 more elements
Dependencies are inferred from the claim text.