Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device
AssigneePrimestar Solar, Inc.
InventorScott Daniel Feldman-Peabody
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Abstract
Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.
Claims19
A method for forming a conductive oxide layer on a substrate, the method comprising:
- sputtering a ceramic target to deposit a transparent conductive oxide layer on a substrate, the ceramic target comprising cadmium, tin, and oxygen, wherein cadmium is present in the ceramic target in a stoichiometric amount that is greater than a standard stoichiometric amount of cadmium stannate, wherein the transparent conductive oxide layer is deposited at a sputtering temperature of about 100° C. to about 600° C.
A method for forming a conductive oxide layer on a substrate, the method comprising:
- sputtering a metal target to deposit a transparent conductive oxide layer on a substrate, wherein the transparent conductive oxide layer is deposited at a sputtering temperature of about 100° C. to about 600° C., wherein the metal target consists essentially of cadmium and tin according to the formula:
- CdxSn, wherein x is 4 to 10.
A method for manufacturing a cadmium telluride based thin film photovoltaic device, the method comprising:
- sputtering a ceramic target to deposit a transparent conductive oxide layer on a substrate, the ceramic target comprising cadmium, tin, and oxygen, wherein cadmium is present in the ceramic target in a stoichiometric amount that is greater than a standard stoichiometric amount of cadmium stannate, wherein the transparent conductive oxide layer is deposited at a sputtering temperature of about 100° C. to about 600° C.;
- forming a resistive transparent buffer layer over the transparent conductive oxide layer;
- forming a cadmium sulfide layer over the resistive transparent layer;
- and,
- forming a cadmium telluride layer over the cadmium sulfide layer.
Dependencies are inferred from the claim text.