Mixture for doping semiconductors
AssigneesCentrotherm Photovoltaics AG, Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
InventorsDaniel Biro, Catherine Voyer, Harald Wanka, Jörg Koriath
Life of this patent
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Abstract
A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also, provided are a method for producing such a doping mixture and the use thereof.
Claims10
Doping mixture for a semiconductor dopant, comprising at least one n-dopant for doping of a semiconductor surface, wherein the dopant contains a water-soluble phosphorus source, water and a mixture of two or more surfactants, at least one of the surfactants being a nonionic, non-fluorinated surfactant and at least another of the surfactants being a fluorinated surfactant, wherein the mixture contains non-ionic, non-fluorinated surfactant in an amount from of 0.01 to 8 wt. % and fluorinated surfactant in an amount of 0.01 to 1 wt. %.
Dependencies are inferred from the claim text.